Semiconductor Dice with Backside Trenches Filled With Elastic Material For Improved Attachment, Packages Using the Same, and Methods of Making the Same
AssigneeFairchild Semiconductor Corporation
InventorsMichael D. Gruenhagen, Suku Kim, James J. Murphy, Eddy Tjhia, Chung-Lin Wu, Mark Larsen, Douglas E. Dolan
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Abstract
Disclosed are semiconductor dice with backside trenches filled with elastic conductive material. The trenches reduce the on-state resistances of the devices incorporated on the dice. The elastic conductive material provides a conductive path to the backsides of the die with little induced stress on the semiconductor die caused by thermal cycling. Also disclosed are packages using the dice, and methods of making the dice.
Claims23
A semiconductor die comprising:
- a semiconductor substrate having a first surface, a second surface opposite to the first surface, and a material elasticity;
- a trench disposed at the second surface of the semiconductor substrate, the trench having a surface that is spaced from the substrate's first surface by at least a first distance;
- a semiconductor device region disposed between the substrate's first surface and the trench, the semiconductor device region having a first electrode at the substrate's first surface and a second electrode adjacent to the trench;
- and
- an elastic electrically conductive layer disposed over trench's surface and a portion of the substrate's second surface, the electrically conductive layer comprising a polymer.
A method of manufacturing a semiconductor die comprising a semiconductor substrate having a first surface, a second surface opposite to the first surface, a semiconductor device region extending from the first surface toward the second surface, and at least one electrode disposed at the first surface, the method comprising:
- forming at least one trench at the second surface of the semiconductor die, the trench extending toward the semiconductor device region;
- and
- forming an electrically conductive layer over the at least one trench and the second surface of the semiconductor substrate, the electrically conductive layer comprising a polymer.
A method of manufacturing a semiconductor die comprising a semiconductor substrate having a first surface, a second surface opposite to the first surface, a semiconductor device region extending from the first surface toward the second surface, and at least one electrode disposed at the first surface, the method comprising:
- forming at least one trench at the second surface of the semiconductor die, the trench extending toward the semiconductor device region;
- forming a first electrically conductive layer over the at least one trench and the second surface of the semiconductor substrate, the electrically conductive layer comprising a metal;
- and
- forming a second electrically conductive layer over the first electrically conductive layer, the electrically conductive layer comprising a polymer and having a greater material elasticity than the first electrically conductive layer.
Dependencies are inferred from the claim text.