Dual Insulating Layer Diode With Asymmetric Interface State And Method Of Fabrication

A metal-insulator diode, comprising:

• a first metal layer;
• a second metal layer separated from the first metal layer;
• a first insulating layer between the first metal layer and the second metal layer, the first insulating layer adjacent to the first metal layer;
• and
• a second insulating layer between the first metal layer and the second metal layer, the second insulating layer adjacent to the first insulating layer and the second metal layer, the second insulating layer having an asymmetric interface state at an interface of the second insulating layer and the first insulating layer.

A method of fabricating a metal-insulator diode, the method comprising:

• forming a first metal layer over a substrate;
• forming a first insulating layer adjacent to the first metal layer, the first insulating layer having an interface with the first metal layer;
• forming a second insulating layer adjacent to the first insulating layer;
• forming a second metal layer adjacent to the second insulating layer;
• and
• forming an asymmetric interface state at the interface of the first metal layer and the first insulating layer.

A method of fabricating a metal-insulator diode, the method comprising:

• forming a first metal layer over a substrate;
• forming a first insulating layer adjacent to the first metal layer;
• forming a second insulating layer adjacent to the first insulating layer, the second insulating layer having an interface with the first insulating layer;
• forming a second metal layer adjacent to the second insulating layer;
• and
• forming an asymmetric interface state at the interface of the first insulating layer and the second insulating layer.