Impurity introducing method using optical characteristics to determine annealing conditions

An electronic device formed by doping an impurity by using an impurity doping method comprising the steps of:

• doping an impurity into a surface of a solid state base body;
• measuring an optical characteristic of an area into which the impurity is doped;
• selecting an electromagnetic wave including wavelength effective for annealing the area into which the impurity is doped based on the measured_optical characteristic of the area into which the impurity is doped;
• and
• annealing the area into which the impurity is doped by irradiating the_electromagnetic wave.

An electronic device formed by doping an impurity by using an impurity doping method comprising the steps of:

• doping an impurity into a surface of a solid state base body;
• measuring an optical characteristic of an area into which the impurity is doped;
• adjusting the optical characteristic based on a measurement result to meet annealing conditions;
• and
• annealing an area into which the impurity is doped.