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US 2010/0148308 A1Published application
Dopant Profile Control for Ultrashallow Arsenic Dopant Profiles
AssigneeTexas Instruments Incorporated
InventorsAlfred HAEUSLER, Wolfgang SCHWARTZ
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Abstract
A method of manufacturing a semiconductor device comprises growing or depositing an implantation oxide layer, implanting a dopant, activating the dopant, and removing the implantation oxide layer after the step of activating the dopant.
Claims8
A method of manufacturing a semiconductor device, the method comprising:
- forming an implantation oxide layer;
- implanting a dopant;
- activating the dopant;
- and
- removing the implantation oxide layer after the step of activating the dopant.
2 more elements
Dependencies are inferred from the claim text.