Semiconductor device and manufacturing method thereof
AssigneeElpida Memory, Inc.
InventorsYoh MATSUDA, Kyoko MIYATA
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Abstract
A semiconductor device includes groove-like regions that are formed between two adjacent bit lines among a plurality of bit lines each having upper and side surfaces covered with a cap insulating film and a side-wall insulating film, respectively, a SiON film that contains more O (oxygen) than N (nitrogen) and continuously covers inner surfaces of the groove-like regions, and a silicon dioxide film formed by reforming polysilazane and filled in the groove-like regions with the SiON film interposed therebetween.
Claims20
A semiconductor device having groove-like regions, comprising;
- a SiON film that contains more O (oxygen) than N (nitrogen) and continuously covers inner surfaces of the groove-like regions;
- and
- a silicon dioxide film that is formed by reforming polysilazane and is filled in the groove-like regions with the SiON film interposed therebetween.
A manufacturing method of a semiconductor device comprising:
- forming groove-like regions;
- forming a SiON film that contains more O (oxygen) than N (nitrogen) to continuously cover inner surfaces of the groove-like regions;
- filling the groove-like regions with polysilazane with the SiON film interposed therebetween;
- and
- reforming the polysilazane by heat treatment.
Dependencies are inferred from the claim text.