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US 2010/0148295 A1Published application
Back-illuminated cmos image sensors
OwnerFrederick T. Brady, Robert M. Guidashinventors
Life of this patent
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Abstract
A semiconductor wafer includes one or more back-illuminated image sensors each formed in a portion of the semiconductor wafer. One or more thinning etch stops are formed in other portions of the semiconductor wafer.
Claims8
A semiconductor wafer comprising one or more thinning etch stops formed therein, wherein at least one thinning etch stop comprises:
- a trench formed in a portion of the semiconductor wafer;
- and
- an etch stop layer disposed on the sidewall and bottom surfaces of the trench, wherein the trench is filled with an insulating layer.
A semiconductor wafer, comprising:
- one or more back-illuminated image sensors each formed in a portion of the semiconductor wafer;
- and
- one or more thinning etch stops each formed in another portion of the semiconductor wafer.
A method for fabricating a thinning etch stop in a semiconductor wafer, the method comprising:
- forming a trench in a portion of the semiconductor wafer;
- forming an etch stop layer along the sidewall and bottom surfaces of the trench;
- and
- filling the trench with an insulating material.
1 more element
Dependencies are inferred from the claim text.