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US 2010/0148292 A1Published application
Semiconductor device
AssigneePanasonic Corporation
InventorsMasanori Minamio, Kyoko Fujii
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate 1; a through electrode 7 extending through the semiconductor substrate 1; a diffusion layer 24 formed in a region of an upper portion of the semiconductor substrate 1 located on a side of the through electrode 7; and a diffusion layer 22 formed in an upper portion of the diffusion layer 24. A portion of the side surface of the through electrode 7 facing the diffusion layer 24 is curved, and a portion of the surface of the diffusion layer 24 facing the through electrode 7 is curved.
Claims5
A semiconductor device, comprising:
- a semiconductor substrate through which a through hole extending from the top surface through the bottom surface is formed;
- a through electrode filled in the through hole to extend through the semiconductor substrate;
- an insulating film formed on the inner wall of the through hole to surround the side surface of the through electrode;
- a first diffusion layer containing impurities formed in a region of an upper portion of the semiconductor substrate located on a side of the through electrode;
- a second diffusion layer formed to cover the first diffusion layer, the second diffusion layer containing impurities at a lower concentration and hence being higher in electric resistance than the first diffusion layer;
- and
- a connection electrode formed on the top surface of the semiconductor substrate to be connected to the through electrode,
- wherein
- a portion of the side surface of the through electrode facing the second diffusion layer is curved toward the inside of the through hole.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate through which a through hole extending from the top surface through the bottom surface is formed;
- a through electrode filled in the through hole to extend through the semiconductor substrate;
- an insulating film formed on the inner wall of the through hole to surround the side surface of the through electrode;
- a first diffusion layer containing impurities formed in a region of an upper portion of the semiconductor substrate located on a side of the through electrode;
- a second diffusion layer formed to cover the first diffusion layer, the second diffusion layer containing impurities at a lower concentration and hence being higher in electric resistance than the first diffusion layer;
- and
- a connection electrode formed on the top surface of the semiconductor substrate to be connected to the through electrode,
- wherein
- a portion of the surface of the second diffusion layer facing the through electrode is curved.
6 more elements
Dependencies are inferred from the claim text.