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US 2010/0148281 A1Published application
Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorNaohisa SENGOKU
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Abstract
A semiconductor device has a gate insulating film formed on a semiconductor substrate, a second gate electrode portion of a gate electrode including a TiN film and a polysilicon film that are successively formed on the gate insulating film, and an interlayer insulating film formed on the semiconductor substrate so as to cover the gate electrode. A contact formed to extend through the interlayer insulating film and the polysilicon film is directly connected to the TiN film.
Claims12
A semiconductor device, comprising:
- a gate insulating film formed on a semiconductor region;
- a gate electrode including a first metal film and a conductive film made of silicon that are successively formed on the gate insulating film;
- an insulating film formed on the semiconductor region so as to cover the gate electrode;
- and
- a second metal film extending through the insulating film and the conductive film, and directly connected to the first metal film.
2 more elements
A semiconductor device, comprising:
- a gate insulating film formed on a first semiconductor region and a second semiconductor region which have different conductivity types;
- a first gate electrode including a first conductive film formed on the gate insulating film in the first semiconductor region;
- a second gate electrode including a first metal film and a second conductive film made of silicon that are successively formed on the gate insulating film in the second semiconductor region;
- an insulating film formed in the first semiconductor region and the second semiconductor region so as to cover the gate electrode;
- and
- a second metal film extending through the insulating film, and connected to the first metal film, wherein
- the first metal film has a vertical portion protruding upwardly and vertically to the second semiconductor region in a portion of the second semiconductor region to be adjacent to the first semiconductor region,
- an upper end surface of the vertical portion of the first metal film is exposed from the first conductive film and the second conductive film, and
- the second metal film is connected to the upper end surface of the vertical portion of the first metal film.
6 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- forming a gate insulating film on a semiconductor region;
- successively forming a first metal film and a conductive film made of silicon on the gate insulating film;
- patterning the first metal film and the conductive film to form a gate electrode from the first metal film and the conductive film;
- forming an insulating film on the semiconductor region to cover the gate electrode therewith;
- forming a contact hole in the insulating film and the conductive film to expose the first metal film therethrough;
- and
- filling the contact hole with a second metal film so as to directly connect the second metal film to the first metal film.
4 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- forming a gate insulating film on a semiconductor substrate having a first semiconductor region and a second semiconductor region which have different conductivity types;
- selectively forming a first metal film on the gate insulating film in the second semiconductor region;
- forming a conductive film made of silicon on the gate insulating film in the first semiconductor region and on the first metal film in the second semiconductor region;
- patterning the conductive film in the first semiconductor region to form therein a first gate electrode from the conductive film, while patterning the conductive film and the first metal film in the second semiconductor region to form therein a second gate electrode from the conductive film and the first metal film;
- forming an insulating film in the first semiconductor region and the second semiconductor region to cover the first gate electrode and the second gate electrode therewith;
- forming a contact hole in the insulating film and the conductive film to expose the first metal therethrough;
- and
- filling the contact hole with a second metal film so as to directly connect the second metal film to the first metal film.
5 more elements
A method for fabricating a semiconductor device, comprising:
- a first step of forming a gate insulating film on a semiconductor substrate having a first semiconductor region and a second semiconductor region which have different conductivity types;
- a second step of selectively forming a first conductive film made of silicon on the gate insulating film in the first semiconductor region;
- a third step of forming a first metal film to continuously cover an upper surface of the first conductive film in the first semiconductor region, a side surface of the first conductive film to be adjacent to the second semiconductor region, and an upper surface of the gate insulating film in the second semiconductor region therewith;
- a fourth step of forming a second conductive film made of silicon on the first metal film;
- a fifth step of polishing the second conductive film to expose the first conductive film and an upper end surface of a portion of the first metal film which is interposed between the first conductive film and the second conductive film and located on the side surface of the first conductive film;
- a sixth step of patterning the first conductive film in the first semiconductor region to form therein a first gate electrode from the first conductive film, while patterning the second conductive film and the first metal film in the second semiconductor region to form therein a second gate electrode from the second conductive film and the first metal film;
- a seventh step of forming an insulating film in the first semiconductor region and the second semiconductor region to cover the first gate electrode and the second gate electrode therewith;
- an eighth step of forming a contact hole in the insulating film to expose the upper end surface of the first metal film therethrough;
- and
- a ninth step of filling the contact hole with a second metal film so as to directly connect the second metal film to the upper end surface of the first metal film.
7 more elements
Dependencies are inferred from the claim text.