Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorRiichirou Mitsuhashi
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a gate insulating film formed on a semiconductor substrate and containing a first element and a second element, and a gate electrode formed on the gate insulating film. The gate insulating film has a higher content of the first element in a portion thereof closer to the semiconductor substrate than in a portion thereof closer to the gate electrode, and a higher content of the second element in a portion thereof closer to the gate electrode than in a portion thereof closer to the semiconductor substrate.
Claims14
A semiconductor device comprising:
- a gate insulating film formed on a semiconductor substrate and containing a first element and a second element;
- and
- a gate electrode formed on the gate insulating film,
- wherein
- the gate insulating film has a higher content of the first element in a lower portion thereof than in an upper portion thereof, and a higher content of the second element in an upper portion thereof than in a lower portion thereof.
A method for fabricating a semiconductor device, comprising the steps of:
- (a) forming an insulating film having a higher content of a first element in a lower portion thereof than in an upper portion thereof, on a semiconductor substrate;
- (b) forming a cap film containing a second element on the insulating film;
- (c) diffusing the second element into the insulating film;
- (d) after step (b), forming an electrode film on the semiconductor substrate;
- and
- (e) after step (d), forming a first gate electrode and a first gate insulating film by selectively etching the electrode film and the insulating film, respectively.
Dependencies are inferred from the claim text.