Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsYoshihiro SATO, Atsuhiro KAJIYA
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Abstract
A semiconductor device includes a first MIS transistor formed on a first active region, and a second MIS transistor formed on a second active region. The first MIS transistor includes a first gate insulating film, and a first gate electrode including a first metal film and a first silicon film. The second MIS transistor includes a second gate insulating film, and a second gate electrode including the first metal film, a second metal film, and a second silicon film.
Claims20
A semiconductor device, comprising:
- a first MIS transistor formed on a first active region of a semiconductor substrate;
- and
- a second MIS transistor formed on a second active region of the semiconductor substrate, wherein
- the first MIS transistor includes:
- a first gate insulating film formed on the first active region;
- and
- a first gate electrode including a first metal film formed on the first gate insulating film, and a first silicon film formed on the first metal film, and
- the second MIS transistor includes:
- a second gate insulating film formed on the second active region;
- and
- a second gate electrode including the first metal film formed on the second gate insulating film, a second metal film formed on the first metal film, and a second silicon film formed on the second metal film.
A method for fabricating a semiconductor device having a first MIS transistor formed on a first active region of a semiconductor substrate and a second MIS transistor formed on a second active region of the semiconductor substrate, comprising the steps of:
- (a) forming, in the semiconductor substrate, the first active region and the second active region each surrounded by an isolation region;
- (b) forming, over the first active region and the second active region, a gate-insulating-film forming film, a first metal film, and a second metal film in this order;
- (c) removing the second metal film formed over the first active region;
- (d) after the step (c), forming a silicon film over the semiconductor substrate;
- and
- (e) after the step (d), performing patterning to form, over the first active region, a first-gate-electrode forming portion including a first gate insulating film formed of the gate-insulating-film forming film, the first metal film, and the silicon film, and form, over the second active region, a second-gate-electrode forming portion including a second gate insulating film formed of the gate-insulating-film forming film, the first metal film, the second metal film, and the silicon film.
A method for fabricating a semiconductor device having a first MIS transistor formed on a first active region of a semiconductor substrate and a second MIS transistor formed on a second active region of the semiconductor substrate, comprising the steps of:
- (a) forming, in the semiconductor substrate, the first active region and the second active region each surrounded by an isolation region;
- (b) forming, over the first active region and the second active region, a gate-insulating-film forming film, a first metal film, and a conductive film in this order;
- (c) removing the conductive film formed over the second active region;
- (d) after the step (c), forming a second metal film on the conductive film in the first active region and on the first metal film in the second active region;
- (e) after the step (d), forming a silicon film over the semiconductor substrate;
- and
- (f) after the step (e), performing patterning to form, over the first active region, a first-gate-electrode forming portion including a first gate insulating film formed of the gate-insulating-film forming film, the first metal film, the conductive film, the second metal film, and the silicon film, and form, over the second active region, a second-gate-electrode forming portion including a second gate insulating film formed of the gate-insulating-film forming film, the first metal film, the second metal film, and the silicon film.
Dependencies are inferred from the claim text.