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US 2010/0148272 A1Published application
Semiconductor device and manufacturing method thereof
OwnerKentaro EDAinventor
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Abstract
A semiconductor device includes a semiconductor substrate having a first region including an n-type active element and a second region including a p-type active element, an element isolation region isolating plurality of the n-type active element and plurality of the p-type active element, a first insulating film having a tensile stress provided on the first region and on the element isolation regions of the second regions, and a second insulating film having a compression stress provided on the second region.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having a first region including an n-type active element and a second region including a p-type active element;
- an element isolation region isolating plurality of the n-type active element and plurality of the p-type active element;
- a first insulating film having a tensile stress provided on the first region and on the element isolation regions of the second regions;
- and
- a second insulating film having a compression stress provided on the second region.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming an element isolation region in a semiconductor substrate having a first region including the n-type active element and a second region including the p-type active element;
- forming the n-type active element in the first region and forming the p-type active element in the second region;
- forming a first insulating film having a tensile stress on the first region and on the element isolation region of the second regions;
- and
- forming a second insulating film having a compression stress on the second region.
2 more elements
Dependencies are inferred from the claim text.