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US 2010/0148269 A1Published application
Tunable spacers for improved gapfill
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsRamachandramurthy Pradeep YELEHANKA, Shailendra MISHRA, Sripad NAGARAD
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Abstract
A device that includes a substrate with an active region is disclosed. The device includes a gate disposed in the active region and tunable sidewall spacers on sidewalls of the gate. A profile of the tunable sidewall spacers includes upper and lower portions in which width of the spacers in the upper portion is reduced at a greater rate than the lower portion.
Claims21
A method for forming a device comprising:
- providing a substrate with an active region, the substrate is prepared with a gate;
- forming sidewall spacers on sidewall of the gate;
- and
- performing a tuning process on the spacers to produce a profile wherein width of the spacers in an upper portion is reduced at a greater rate than a lower portion.
1 more element
A method for forming tunable sidewall spacers comprising:
- providing a substrate having a feature thereon;
- forming a dielectric layer on the substrate covering the feature;
- and
- patterning the dielectric layer to form tunable sidewall spacers, wherein a width of the spacers in an upper portion is reduced at a greater rate than a lower portion in a tuning process.
1 more element
A device comprising:
- a substrate with an active region;
- a gate disposed in the active region;
- and
- tunable sidewall spacers on sidewalls of the gate, wherein a profile of the tunable sidewall spacers comprises upper and lower portions in which width of the spacers in the upper portion is reduced at a greater rate than the lower portion.
1 more element
Dependencies are inferred from the claim text.