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US 2010/0148268 A1Published application
Insulated-gate semiconductor device
AssigneesSanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.
InventorsYasunari NOGUCHI, Eio ONODERA, Hiroyasu ISHIDA
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Abstract
Channel regions continuous with transistor cells are disposed also below a gate pad electrode. The channel region below the gate pad electrode is fixed to a source potential. Thus, a predetermined reverse breakdown voltage between a drain and a source is secured without forming a p+ type impurity region below the entire lower surface of the gate pad electrode. Furthermore, a protection diode is formed in a conductive layer disposed at the outer periphery of an operation region.
Claims8
A transistor device comprising a protection diode device, comprising:
- a semiconductor substrate;
- a transistor formed on the semiconductor substrate;
- a gate pad electrode disposed on the semiconductor substrate and connected to the transistor;
- a source electrode disposed on and connected to the transistor;
- a first diode series comprising a plurality of pn junctions connected serially, one end of the first diode series being connected to the gate pad electrode and another end of the first diode series being connected to the source electrode;
- and
- a second diode series comprising a plurality of pn junctions connected serially, one end of the second diode series being connected to the gate pad electrode and another end of the second diode series being connected to the source electrode.
4 more elements
Dependencies are inferred from the claim text.