Electrostatic discharge protection device and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHsin-Yen Hwang, Tien-Hao Tang
Life of this patent
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Abstract
An ESD protection device including a substrate, a gate structure, a source region, a drain region and a first implanted region is provided. The gate structure includes a gate dielectric layer and a gate sequentially disposed on the substrate. The source region and the drain region are disposed in the substrate beside the gate structure. The first implanted region has the same conductivity type as the drain region. The first implanted region is disposed below the drain region, and the border thereof does not exceed the border of the drain region.
Claims20
An ESD protection device, comprising:
- a substrate;
- a gate structure, comprising a gate dielectric layer and a gate sequentially disposed on the substrate;
- a source region, disposed in the substrate at one side of the gate structure;
- a drain region, disposed in the substrate at the other side of the gate structure, wherein a channel region is disposed between the source region and the drain region;
- and
- a first implanted region, having the same conductivity type as the drain region and disposed below the drain region, wherein a border of the first implanted region does not exceed a border of the drain region.
A method of fabricating an ESD protection device, comprising:
- forming a gate dielectric layer and a gate sequentially on a substrate, so as to form a gate structure;
- forming a source region and a drain region in the substrate beside the gate structure, wherein a channel region is formed between the source region and the drain region;
- and
- forming a first implanted region in the substrate, wherein the first implanted region has the same conductivity type as the drain region, and the first implanted region is formed below the drain region and a border thereof does not exceed a border of the drain region.
Dependencies are inferred from the claim text.