Semiconductor device and method of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorCHEOL HO CHO
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Abstract
Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate formed therein with a first conductive type well, and an LDMOS device formed on the substrate. The LDMOS device includes a gate electrode, gate oxides formed below the gate electrode, a source region formed in the substrate at one side of the gate electrode, and a drain region formed in the substrate at an opposite side of the gate electrode. The gate oxide includes first and second gate oxides disposed side-by-side and having thicknesses different from each other.
Claims8
A semiconductor device comprising:
- a substrate formed therein with a first conductive type well;
- and
- a lateral diffused metal oxide semiconductor (LDMOS) device formed on the substrate,
- wherein the LDMOS device includes a gate electrode, a gate oxide formed on the substrate below the gate electrode, a source region formed in the substrate at one side of the gate electrode, and a drain region formed in the substrate at an opposite side of the gate electrode, and wherein the gate oxide includes a first gate oxide and a second gate oxide side-by-side on the substrate, the first and second gate oxides having thicknesses different from each other.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first conductive type deep well in a second conductive type substrate;
- forming a second conductive type body in the first conductive type deep well;
- forming a first conductive type well in the first conductive type deep well;
- forming a double structure gate oxide on the second conductive type substrate;
- forming a gate electrode on the double structure gate oxide;
- and
- forming a source region in the second conductive type body and a drain region in the first conductive type well.
Dependencies are inferred from the claim text.