MOS-FET Having a Channel Connection, and Method for the Production of a MOS-FET Having a Channel Connection

A MOSFET comprising:

• a substrate of a semiconductor material;
• source/drain regions, which are arranged at a distance from each other at a surface of the substrate;
• a gate electrode arranged above an area of the surface of the substrate between the source/drain regions, the gate electrode being electrically insulated from the semiconductor material;
• at least one recess in the gate electrode, a through-contact arranged in the recess of the gate electrode, the through-contact being electrically insulated from the gate electrode;
• a terminal contact on the semiconductor material;
• and
• a terminal conductor arranged on a side of the gate electrode that faces away from the substrate, wherein the through-contact electrically connects the terminal contact to the terminal conductor.

A method for producing a MOSFET, comprising the steps of:

• forming source/drain regions at a distance from each other at a surface of a substrate of semiconductor material;
• arranging a gate electrode above an area of the surface of the substrate present between the source/drain regions and being electrically insulated from the semiconductor material;
• providing the gate electrode with at least one recess;
• arranging a through-contact, that is electrically isolated from the gate electrode, in at least one recess of the gate electrode, so that the through-contact forms a terminal contact on the semiconductor material;
• and
• forming a terminal conductor at the through-contact.