US 2010/0148253 A1 · HIGH VOLTAGE SEMICONDUCTOR DEVICES WITH SCHOTTKY DIODES

Abstract

High voltage semiconductor devices with Schottky diodes are presented. A high voltage semiconductor device includes an LDMOS device and a Schottky diode device. The LDMOS device includes a semiconductor substrate, a P-body region in a first region of the substrate, and an N-drift region in the second region of the substrate with a junction therebetween. A patterned isolation region defines an active region. An anode electrode is disposed on the P-body region. An N+-doped region is disposed in the N-drift region. A cathode electrode is disposed on the N+-doped region. The Schottky diode includes an N-drift region on the semiconductor substrate. The anode electrode is disposed on the N-drift region at the first region of the substrate. The N+-doped region is disposed on the N-drift region at the second region of the substrate. The cathode electrode is disposed on the N+-doped region.

Claims20

Dependent claims

A high voltage semiconductor device integrated with a Schottky diode, comprising:
a first device comprising:
a semiconductor substrate;
a first type doped-body region in a first region of the semiconductor substrate;
a second type doped-drift region in the second region of the semiconductor substrate with a junction between the second type doped-drift region and the first type doped-body region;
an isolation region disposed on the semiconductor substrate defining an active region;
a dielectric layer disposed on the semiconductor substrate with one end extending overlying part of the isolation region and the other end exposing a portion of the first type doped-body region;
a first electrode disposed on the exposed portion of the first type doped-body region;
a second type heavily doped region disposed in the second type doped-drift region and contacted with a second end of the isolation region;
a second electrode disposed on the second type heavily doped region;
and
a third electrode disposed on the dielectric layer;
and
a second device comprising:
a second type doped-drift region formed in the first region and a second region of the semiconductor substrate;
a first electrode disposed on the second type doped-drift region in the first region of the semiconductor substrate;
a second type heavily doped region formed in the second type doped-drift region in the second region of the semiconductor substrate;
and
a second electrode disposed on the second type heavily doped region.

16 more elements

Dependencies are inferred from the claim text.

High voltage semiconductor devices with schottky diodes

Life of this patent

High voltage semiconductor devices with schottky diodes

Life of this patent

Abstract

Claims20