Method Of Manufacturing A Memory Device
AssigneeMicron Technology, Inc.
InventorsGordon A. Haller, David K. Hwang, Sanh Dang Tang, Ceredig Roberts
Life of this patent
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Abstract
A memory device comprises an active area comprising a source and at least two drains defining a first axis. At least two substantially parallel word lines are defined by a first pitch, with one word line located between each drain and the source. Digit lines are defined by a second pitch, one of the digit lines being coupled to the source and forming a second axis. The active areas of the memory array are tilted at 45° to the grid defined by the word lines and digit lines. The word line pitch is about 1.5F, while the digit line pitch is about 3F.
Claims32
A memory device, comprising:
- a substantially linear active area comprising a source and at least two drains defining a first axis;
- at least two substantially parallel word lines defined by a first pitch, at least a portion of a first word line located between a first of the at least two drains and the source, and at least a portion of a second word line located between a second of the at least two drains and the source;
- and
- at least two digit lines defined by a second pitch, one of the at least two digit lines being coupled to the source and forming a second axis;
- wherein an acute angle between the first and second axes is within the range of 10 to 80 degrees, and wherein one of the first and second pitches is greater than two and a half times a minimum resolution (F) of a photolithographic technique used to form the memory device, and the other of the first and second pitches of the memory device is less than two times the minimum resolution.
An integrated circuit, comprising:
- at least two memory cells comprising at least two drains sharing a source, the at least two memory cells defining a first longitudinal axis extending between at least one of the at least two drains and the source;
- at least two substantially parallel, recessed word lines intersecting the at least two memory cells;
- and
- at least two digit lines defined by a pitch between 2.75 and 3.25 times a minimum resolution (F) of a photolithographic technique used to form the integrated circuit, one of the at least two digit lines being coupled to the source and extending along a second axis;
- wherein the first and second axes form an acute angle between them and wherein the word lines are defined by an effective pitch between 1.25 and 1.9 times the minimum resolution.
A system, comprising:
- an active area comprising a source and a drain;
- a word line formed by a pitch-doubling technique, at least a portion of which intersects the active area;
- and
- at least two digit lines having a pitch of greater than two and a half times a minimum resolution (F) of a photolithographic technique used to form the system, one of the at least two digit lines being electrically coupled to the source.
29-35. (canceled)
A memory device, comprising:
- a substantially linear active area comprising a source and at least two drains defining a first axis;
- at least two substantially parallel word lines forming a second axis, at least a portion of a first word line located between a first of the at least two drains and the source, and at least a portion of a second word line located between a second of the at least two drains and the source;
- and
- a digit line coupled to the source and forming a third axis;
- wherein the second and third axes are generally perpendicular, and wherein an acute angle between the first and third axes is within the range of 40 to 50 degrees.
38-62. (canceled)
Dependencies are inferred from the claim text.