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US 2010/0148243 A1Published application
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorSu Ock CHUNG
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Abstract
A semiconductor device comprises an active region including a first active area to be a source/drain and a second active area to be a gate, and a device isolation region defining the active region. The first active area is obtained by growing a semiconductor substrate located between the gates as a seed layer, and formed to have a larger line-width than that of the second active area in a longitudinal direction of the gate.
Claims2
A semiconductor device comprising:
- an active region including a source/drain and a gate;
- and
- a device isolation region defining the active region,
- wherein the gate is formed as a portion of a fin gate, and the source/drain is an epitaxial layer formed between the neighboring gates as a seed layer,
- wherein in a longitudinal direction of the gate, a line width of the source/drain is greater than the width of the gate.
2 more elements
Dependencies are inferred from the claim text.