Semiconductor device and method of forming semiconductor device
AssigneeElpida Memory, Inc.
InventorHiroyuki FUJIMOTO
Life of this patent
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Abstract
A semiconductor device include a semiconductor substrate comprising a substrate body, a base over the substrate body and a pillar over a first region of the base; a buried line adjacent to a side surface of the base; a first diffusion layer over a second region of the base; a second diffusion layer over the pillar, the second diffusion layer being higher in level than the first diffusion layer; and a third diffusion layer disposed between the buried line and the semiconductor substrate. The third diffusion layer is different in level from the first diffusion layer. The top level of the third diffusion layer is lower than the top level of the first diffusion layer.
Claims20
A semiconductor device comprising:
- a semiconductor substrate comprising a substrate body, a base over the substrate body and a pillar over a first region of the base;
- a buried line adjacent to a side surface of the base;
- a first diffusion layer over a second region of the base;
- a second diffusion layer over the pillar, the second diffusion layer being higher in level than the first diffusion layer;
- and
- a third diffusion layer disposed between the buried line and the semiconductor substrate, the third diffusion layer being different in level from the first diffusion layer, the top level of the third diffusion layer being lower than the top level of the first diffusion layer.
A semiconductor device comprising:
- a semiconductor substrate comprising a substrate body, a base over the substrate body and a pillar over a first region of the base;
- a buried line adjacent to a side surface of the base;
- a first diffusion layer over a second region of the base;
- a second diffusion layer over the pillar, the second diffusion layer being higher in level than the first diffusion layer;
- and
- a third diffusion layer disposed between the buried line and the semiconductor substrate,
- wherein the buried line is different in level or depth from the first diffusion layer, and the top level of the buried line is lower than the top level of the first diffusion layer.
A method of forming a semiconductor device, the method comprising:
- forming a fin on a semiconductor substrate;
- forming a buried line in the semiconductor substrate, the buried line being lower in level than the fin;
- forming a first groove in the fin to form at least one pillar, and the first groove having a bottom which is higher in level than the buried line;
- introducing an impurity into a bottom surface of the first groove to form a first diffusion layer;
- forming a second diffusion layer over the pillar;
- and
- forming a third diffusion layer between the buried line and the semiconductor substrate, the third diffusion layer being different in level from the first diffusion layer, the top level of the third diffusion layer being lower than the top level of the first diffusion layer.
Dependencies are inferred from the claim text.