Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a p-type insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a <−110> direction;
• a first element isolation insulation film which is buried in a trench in an element isolation region of the semiconductor substrate and has a positive expansion coefficient, the first element isolation insulation film applying a compressive stress by operation heat to the p-type insulated-gate field-effect transistor in the channel length direction;
• an n-type insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (100) plane direction, and which has a channel length direction in a <100> direction;
• and
• a second element isolation insulation film which is buried in a trench in an element isolation region of the semiconductor substrate and has a negative expansion coefficient, the second element isolation insulation film applying a tensile stress by operation heat to the n-type insulated-gate field-effect transistor in the channel length direction.

A method of manufacturing a semiconductor device, comprising:

• forming a trench for element isolation in an element isolation region of a semiconductor substrate along two axial directions that are a channel width direction and a channel length direction, the semiconductor substrate having an element formation plane in a (100) plane direction;
• burying a silicon oxide film in the trench, thereby forming a first element isolation insulation film;
• doping a crystal seed only in the silicon oxide film extending in the channel length direction;
• performing a first heat treatment process on the silicon oxide film doped the crystal seed, thereby making the silicon oxide film transition into a glass state;
• performing a second heat treatment process on the silicon oxide film that is in the glass state, thereby precipitating a crystal nucleus in an amorphous matrix layer in the silicon oxide film;
• performing a third heat treatment process on the amorphous matrix layer including the crystal nucleus, thereby growing the crystal nucleus into a crystal line and forming a second element isolation insulation film including a glass ceramics layer;
• forming a gate insulation film on the semiconductor substrate in an element region;
• forming a gate electrode on the gate insulation film such that the channel length direction is set in a <−110> direction;
• and
• forming a source and a drain spaced apart in the semiconductor substrate in a manner to sandwich the gate electrode.