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US 2010/0148222 A1Published application
Gas sensor having a field-effect transistor
AssigneeRobert Bosch GmbH
InventorAndreas Krauss
Life of this patent
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Abstract
A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer being applied on the gate region. A porous adhesive agent is provided for the adhesion of the gas-sensitive layer in the gate region.
Claims14
A gas sensor having a field-effect transistor for detecting gases or gas mixtures, comprising:
- a substrate having a source region, a drain region and a gate region;
- a gas-sensitive layer situated on the gate region;
- and
- a porous adhesive agent situated in the gate region for an adhesion of the gas-sensitive layer.
1 more element
Dependencies are inferred from the claim text.