Vertical photogate (vpg) pixel structure with nanowires
AssigneeZena Technologies, Inc.
InventorsYoung-June Yu, Munib Wober, Thomas P.H.F. Wendling
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Abstract
An embodiment relates to a device comprising a nanowire photodiode comprising a nanowire and at least on vertical photogate operably coupled to the nanowire photodiode.
Claims44
A device comprising:
- a nanowire photodiode comprising a nanowire;
- and
- at least one vertical photogate operably coupled to the nanowire photodiode.
An apparatus comprising a plurality of nanowire photodiode devices, the nanowire photodiode devices comprising a nanowire photodiode and at least one vertical photogate operably coupled to the nanowire photodiode, the nanowire photodiode comprising a nanowire and a cladding.
An device comprising:
- a nanowire photodiode comprising a nanowire;
- one vertical photogate operably coupled to the nanowire photodiode;
- and
- at least three transistors.
The device of claim 29, wherein the accumulation of holes suppresses thermally generated dark current.
The device of claim 31, wherein the well is configured to collect electrons generated in the nanowire or in the substrate.
The device of claim 31, further comprising a shallow layer on top of the well, the shallow layer comprising doping of the first type.
The device of claim 33, further comprising an intrinsic layer on top of the well.
The device of claim 34, wherein the shallow layer, the intrinsic layer, and the well for a PIN photodiode.
The device of claim 34, wherein the pixel is configured to apply a bias voltage to the vertical photogate, the bias being either DC bias or pulse bias.
The device of claim 37, further comprising a p+ layer over a tip of the nanowire.
A method of manufacturing a device comprising:
- forming a nanowire photodiode comprising a nanowire;
- and
- operably coupling at least one vertical photogate to the nanowire photodiode.
Dependencies are inferred from the claim text.