Semiconductor light receiving element and method for manufacturing semiconductor light receiving element
AssigneeMitsubishi Electric Corporation
InventorsMasaharu Nakaji, Eitaro Ishimura
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Abstract
A semiconductor light detecting element having a mesa structure comprises: a first semiconductor layer having n-type conductivity located on a semiconductor substrate, a light absorbing layer located on the first semiconductor layer, and a second semiconductor layer located on the light absorbing layer; a burying layer burying peripheries of the light absorbing layer and the second semiconductor layer. The burying layer has a band gap larger than the band gap of the light absorbing layer. The second semiconductor layer has a first region having p-type conductivity, and a second region having i-type or n-type conductivity and located between the first region and the burying layer.
Claims5
A semiconductor light detecting element having a mesa structure comprising:
- a semiconductor substrate;
- a first semiconductor layer having en-type conductivity and located on said semiconductor substrate,
- a light absorbing layer located on said first semiconductor layer,
- a second semiconductor layer located on said light absorbing layer;
- and
- a burying layer burying peripheries of said light absorbing layer and said second semiconductor layer, said burying layer having a band gap larger than the band gap of said light absorbing layer, wherein said second semiconductor layer comprises a first region having p-type conductivity, and a second region having i-type or n-type conductivity and located between said first region and said burying layer.
A method for manufacturing a semiconductor light detecting element comprising:
- forming a first semiconductor layer having n-type conductivity on a semiconductor substrate,
- forming a light absorbing layer on said first semiconductor layer;
- forming a second semiconductor layer having i-type or n-type conductivity on said light absorbing layer;
- forming a mesa structure by etching said light absorbing layer and said second semiconductor layer;
- forming a burying layer having a band gap larger than the band gap of said light absorbing layer, burying the periphery of said mesa structure;
- and
- forming a p-type region having p-type conductivity by placing a p-type impurity in a part of said second semiconductor layer so that a region having i-type or n-type conductivity is left between said burying layer and said p-type region.
Dependencies are inferred from the claim text.