IGBT Having One or More Stacked Zones Formed within a Second Layer of the IGBT

A method of manufacturing an IGBT, comprising:

• forming a semiconductor device having a first layer with a first region and a second region located within the first region, a second layer arranged below the first layer and a third layer formed under the second layer;
• forming one or more stacked zones within the second layer, wherein each one or more stacked zones comprises a first zone and a second zone that overlies the first zone, wherein each first zone is inversely doped with respect to the second layer, and wherein each second zone is inversely doped with respect to the first zone;
• forming a gate overlying at least a portion of the first region between the second region and the first layer;
• forming a first contact coupled to the first region;
• and
• forming a second contact coupled to the third layer.

An IGBT, comprising:

• a first region means;
• a second region means located within the first region means;
• a first contact means for coupling to the first region means;
• a first layer means arranged below the first region means;
• a gate means overlying at least a portion of the first region means between the second region means and the first layer means;
• a second layer means formed under the first layer means;
• one or more stacked zone means formed within the second layer means, wherein each one or more stacked zone means comprises a first zone means and a second zone means that overlies the first zone means, wherein each first zone means is inversely doped with respect to the second layer means, and wherein each second zone means is inversely doped with respect to the first zone means;
• a third layer means formed under the second layer means;
• and
• a second contact means coupled to the third layer means