Tunnel device
OwnerYen-Wei Hsu, Whel-Chyou Wuinventors
Life of this patent
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Abstract
The present invention has provided a new diode and transistor by employing the characteristic of the tunnel diode. The new diode and transistor are field interacted and can be a solarcell, light sensor, thermal device, Hall device, pressure device or acoustic device which outputs self-excited multi-band waveforms with broad bandwidth. The present invention has also revealed a precisional switch which can works at high speeds and a capacitor whose capacitance can be actively controlled.
Claims20
A tunnel diode, comprising,
- a p-type device which is PDR or NDR, and
- a n-type device which is NDR or PDR coupled with the p-type device,
- wherein
- either the p-type device or the n-type device is a PDR and the other device is a NDR, and the PDR and NDR are generated by thermal field, optical field, electric field, pressure field, or acoustic field, or any combinations of them.
A transistor comprising:
- a first device which is p-type or n-type and is PDR or NDR,
- a second device which is p-type or n-type and is PDR or NDR coupled with the first device to form a first tunnel diode, and
- a third device which is p-type or n-type and is PDR or NDR coupled with the second device to form a second tunnel diode, wherein
- the first, second and third devices comprises a PDR and a NDR, and
- the PDR and NDR are generated by thermal field, optical field, electric field, pressure field, or acoustic field, or any combinations of them.
The transistor of claim of 9, further comprising a first terminal coupled with the first device, a second terminal coupled with the third terminal, a third terminal coupled with the second device, and a fourth and a fifth terminals respectively coupled with two transversal sides of the transistor for coupling outside circuits, wherein the first, second, third, fourth and fifth terminals are NDRS.
A capacitor, comprising:
- a first electrode having PDR property;
- a second electrode having NDR property;
- and
- a field-interacted dielectric disposed between the first and second electrodes and coupled with the first and second electrodes, wherein the field-interacted dielectric is interacted by thermal field, optical field, electric field, pressure field, or acoustic field, or any combinations of them for controlling the capacitance of the capacitor, and the PDR and NDR are generated by thermal field, optical field, electric field, pressure field, or acoustic field, or any combinations of them.
Dependencies are inferred from the claim text.