Method for producing group iii nitride semiconductor crystal, group iii nitride semiconductor substrate, and semiconductor light- emitting device
AssigneeMitsubishi Chemical Corporation
InventorsKenji Fujito, Kazumasa Kiyomi
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Abstract
The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.
Claims19
A method for producing a group III nitride semiconductor crystal, comprising:
- preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase,
- wherein the method includes growing the group III nitride semiconductor so as to extend in the +C-axis direction (<0001> direction) of the seed crystal.
A group III nitride semiconductor substrate having a non-polar plane as the surface thereof, wherein the length of the dislocation line detected in observation from the non-polar plane side thereof according to a cathodeluminescence method in the vicinity of the surface of the non-polar plane is at most 10 μm.
Dependencies are inferred from the claim text.