Light emitting device and method for manufacturing same

A method for manufacturing a light emitting device, comprising:

• forming a light emitting element by forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface of a translucent substrate, and by forming a p-side electrode and an n-side electrode on the multilayer body, the first surface of the translucent substrate including a groove which surrounds the multilayer body;
• forming a dielectric film on the second surface side, the dielectric film having a first and second openings on the p-side electrode and the n-side electrode;
• forming a seed metal on the dielectric film and an exposed surface of the first and second openings;
• forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal;
• forming a p-side metal pillar and an n-side metal pillar on the p-side metal interconnect layer and the n-side metal interconnect layer, respectively;
• separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer;
• forming a resin in a space from which the seed metal is removed;
• and
• grinding the translucent substrate from a second surface opposite to the first surface so as to reach a bottom surface of the groove.

A light emitting device comprising:

• a multilayer body having a first surface and a second surface opposite to the first surface and including a light emitting layer;
• a p-side electrode and an n-side electrode provided on the second surface of the multilayer body;
• a dielectric film having openings to which the p-side electrode and the n-side electrode are exposed;
• a p-side extraction electrode including a p-side seed metal provided on the p-side electrode and a p-side metal interconnect layer provided on the p-side seed metal;
• an n-side extraction electrode including an n-side seed metal provided on the n-side electrode and an n-side metal interconnect layer provided on the n-side seed metal;
• and
• a resin layer provided around the p-side extraction electrode and the n-side extraction electrode.