Laser-induced flaw formation in nitride semiconductors
AssigneePalo Alto Research Center Incorporated
InventorsClifford F. Knollenberg, William S. Wong, Christopher L. Chua
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Abstract
An embodiment is a method and apparatus to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern.
Claims25
A method comprising:
- selectively decomposing regions of a thin film structure within a thin film layer to form flaws in a pre-determined pattern within the thin film structure, the flaws locally concentrating stress in the pre-determined pattern during a stress-inducing operation;
- and
- performing the stress-inducing operation, the stress-inducing operation causing the thin film layer to fracture at the pre-determined pattern.
An apparatus comprising:
- a thin film layer of a thin film structure, the thin film layer having flaws formed in a pre-determined pattern, the flaws locally concentrating stress in the pre-determined pattern during a stress-inducing operation;
- and
- a substrate attached to the thin film layer, the substrate being removed in the stress-inducing operation.
Dependencies are inferred from the claim text.