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US 2010/0148187 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHisashi Aikawa
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes a transistor including a gate electrode formed on a semiconductor substrate of a predetermined crystal via a gate insulating film and a source-drain region formed in the semiconductor substrate so as to have a convex portion in a direction of a gate width and in which an epitaxial crystal having a lattice constant different from that of the predetermined crystal is embedded, and a contact plug formed on the source-drain region other than the convex portion.
Claims20
A semiconductor device, comprising:
- a transistor comprising a gate electrode formed on a semiconductor substrate of a predetermined crystal via a gate insulating film, and a source-drain region formed in the semiconductor substrate so as to have a convex portion in a direction of a gate width, and in which an epitaxial crystal having a lattice constant different from that of the predetermined crystal is embedded;
- and
- a contact plug formed on the source-drain region other than the convex portion.
Dependencies are inferred from the claim text.