Flip-chip light-emitting diode device
AssigneeEverlight Electronics Co., Ltd.
InventorChin-Yuan Hsu
Life of this patent
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Abstract
A flip-chip light-emitting diode (LED) device is provided. The flip-chip LED device includes a substrate, an n-GaN layer, an epitaxy layer, a p-GaN layer, a first electrode, and a second electrode. The n-GaN layer is formed on a surface of the substrate. The epitaxy layer is formed on the n-GaN layer. The p-GaN layer is formed on the epitaxy layer. The first electrode has a first polarity and is formed on the p-GaN layer. The first electrode substantially covers the p-GaN layer. The second electrode is formed on the n-GaN layer and has a second polarity opposite to the first polarity.
Claims15
A light-emitting diode (LED) device, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- an n-GaN layer formed on the first surface of the substrate;
- an epitaxy layer formed on the n-GaN layer;
- a p-GaN layer formed on the epitaxy layer;
- a first electrode having a first polarity and formed on the p-GaN layer, wherein the first electrode substantially covers the p-GaN layer;
- and
- a second electrode having a second polarity opposite to the first polarity of the first electrode, wherein the second electrode is formed on the n-GaN layer.
A light-emitting diode (LED) device, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- an n-GaN layer formed on the first surface of the substrate, wherein the n-GaN layer is saw-toothed and has a plurality of indentations and protrusions which are consecutively disposed;
- a plurality of epitaxy layers respectively formed on the protrusions of the n-GaN layer;
- a plurality of p-GaN layers respectively formed on the epitaxy layers;
- a plurality of first electrodes having a first polarity and respectively formed on the p-GaN layers, wherein the first electrodes are equally spaced;
- and
- a plurality of second electrodes having a second polarity opposite to the first polarity of the first electrodes, wherein the second electrodes are formed on the n-GaN layer and located on two sides of the substrate.
Dependencies are inferred from the claim text.