Thin film transistor array panel with common bars of different widths
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Soo KIM, Dong-Gyu Kim
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Abstract
A gate wire and a storage electrode wire extending in a transverse direction are provided, and a data wire extending in a longitudinal direction intersects the gate wire and the storage electrode wire. A plurality of pixel electrodes and a plurality of TFTs are provided on pixel areas defined by the intersections of the data wire and the gate wire. The storage electrode wire is interconnected by a plurality of storage electrodes connections provided on the pixel areas. In this way, a common bar disposed between gate pads and a display area is omitted or has reduced width. Therefore, the fan-out areas becomes to have sufficient size to reduce the resistance difference between the signal lines.
Claims13
-7. (canceled)
A thin film transistor array panel comprising:
- an insulating substrate;
- an active area displaying images, and comprising a pixel electrode electrically connected to a thin film transistor;
- a peripheral area surrounding the active area, and comprising a first portion and a second portion being opposite to the first portion with the active area therebetween;
- a storage electrode line insulated from the thin film transistor, and at least partially overlapping the pixel electrode;
- a first common bar having a first width, disposed on the first portion, and electrically connected to one side of the storage electrode line;
- and
- a second common bar having a second width different from the first width, disposed on the second portion, and electrically connected to another side of the storage electrode line.
Dependencies are inferred from the claim text.