US 2010/0148174 A1 · GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufacturing GaN Epitaxial Wafer and Semiconductor Devices

Abstract

Affords GaN epitaxial wafers designed to improve production yields, as well as semiconductor devices utilizing such GaN epitaxial wafers, and methods of manufacturing such GaN epitaxial wafers and semiconductor devices. A GaN epitaxial wafer manufacturing method involving the present invention includes a first GaN layer formation step of epitaxially growing a first GaN layer onto a substrate, a pit formation step, following the first GaN layer formation step, of forming pits in the front side of the substrate, and a second GaN layer formation step, following the pit-formation step, of epitaxially growing a second GaN layer onto the first GaN layer, and therefore controls cracking to a minimum and improves production yields.

Claims14

Dependent claims

A GaN epitaxial wafer manufacturing method including:

a first GaN layer formation step of epitaxially growing a first GaN layer onto a substrate;
a pit formation step, following said first GaN layer formation step, of forming pits in the front side of the substrate;
and
a second GaN layer formation step, following said pit-formation step, of epitaxially growing a second GaN layer onto the first GaN layer.

1 more element

Dependencies are inferred from the claim text.

GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufacturing GaN Epitaxial Wafer and Semiconductor Devices

Life of this patent

GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufacturing GaN Epitaxial Wafer and Semiconductor Devices

Life of this patent

Abstract

Claims14