Semiconductor device and method of manufacturing semiconductor device
AssigneeNEC Electronics Corporation
InventorsYoshihiro Hayashi, Naoya Inoue, Kishou Kaneko
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Abstract
A semiconductor device of the present invention has a first interconnect layer formed over the semiconductor substrate, and a semiconductor element; the first interconnect layer has an insulating layer, and a first interconnect filled in a surficial portion of the insulating layer; the semiconductor element has a semiconductor layer, a gate insulating film, and a gate electrode; the semiconductor layer is positioned over the first interconnect layer; the gate insulating film is positioned over or below semiconductor layer; and the gate electrode is positioned on the opposite side of the semiconductor layer while placing the gate insulating film in between.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a first interconnect layer which includes an insulating layer formed over said semiconductor substrate, and a first interconnect filled in a surficial portion of said insulating layer;
- a semiconductor layer positioned over said first interconnect layer;
- a gate insulating film positioned over or below said semiconductor layer;
- and
- a gate electrode positioned on the opposite side of said semiconductor layer while placing said gate insulating film in between.
A method of manufacturing a semiconductor device comprising:
- forming, over a semiconductor substrate, a first interconnect layer which includes an insulating layer, and a first interconnect filled in a surficial portion of said insulating layer;
- forming, over said first interconnect layer, a gate insulating film which is positioned over said first interconnect;
- forming a semiconductor layer over said gate insulating film;
- and
- forming source-and-drain regions in said semiconductor layer.
A method of manufacturing a semiconductor device comprising:
- forming, over a semiconductor substrate, a first interconnect layer which includes an insulating layer, and a first interconnect filled in a surficial portion of said insulating layer;
- forming a semiconductor layer over said first interconnect layer;
- forming a gate insulating film over said semiconductor layer;
- forming a gate electrode over said gate insulating film;
- and
- forming source-and-drain regions in said semiconductor layer.
Dependencies are inferred from the claim text.