Thin-film transistor substrate and method of fabricating the same

A TFT substrate comprising:

• gate wiring which is formed on an insulating substrate;
• oxide active layer patterns which are formed on the gate wiring and comprise indium zinc oxide, and hafnium or gallium;
• buffer layer patterns disposed on the oxide active layer patterns to directly contact the oxide active layer patterns, the buffer layer patterns comprising titanium nitride or molybdenum;
• and
• data wiring formed on the buffer layer patterns to insulatedly cross the gate wiring,
• wherein a Gibbs free energy of an oxide of hafnium or an oxide of gallium, that of an oxide of indium, and that of an oxide of zinc are each lower than a Gibbs free energy of an oxide of titanium nitride or an oxide of molybdenum.

A method of fabricating a TFT substrate, the method comprising:

• forming gate wiring on an insulating substrate;
• and
• forming oxide active layer patterns, which comprise an oxide of a first material, on the gate wiring;
• forming buffer layer patterns, which comprise a second material, on the oxide active layer patterns to directly contact the oxide active layer patterns;
• and
• forming data wiring on the buffer layer patterns to insulatedly cross the gate wiring,
• wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.

A method of fabricating a TFT substrate, the method comprising:

• forming gate wiring on an insulating substrate;
• forming oxide active layer patterns, which comprise indium zinc oxide, and hafnium or gallium, on the gate wiring;
• forming buffer layer patterns, which comprise titanium nitride or molybdenum, on the oxide active layer patterns to directly contact the oxide active layer patterns;
• and
• forming data wiring on the buffer layer patterns to insulatedly cross the gate wiring,
• wherein a Gibbs free energy of an oxide of hafnium or an oxide of gallium, that of an oxide of indium, and that of an oxide of zinc are each lower than a Gibbs free energy of an oxide of titanium nitride or an oxide of molybdenum.