US 2010/0148168 A1Published application

Integrated circuit structure

AssigneeIndustrial Technology Research Institute

InventorsChih-Ming Lai, Chun-Cheng Cheng, Yung-Hui Yeh

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Abstract

An integrated circuit structure including a substrate, an insulating layer, a first transistor and a second transistor is provided. The insulating layer, the first transistor and the second transistor are disposed on the substrate. The first transistor includes a first gate, a first oxide semiconductor layer, a first source and a first drain. A portion of the first source and the first drain directly contacting the first oxide semiconductor layer is composed of a Ti-containing metal. The second transistor includes a second gate, a second oxide semiconductor layer, a second source and a second drain. A portion of the second source and the second drain directly contacting the second oxide semiconductor layer is composed of a none-Ti-containing metal. In addition, the first oxide semiconductor layer and the second oxide semiconductor layer may have different thickness or different carrier concentrations.

Claims33

Dependent claims

An integrated circuit structure, at least comprising:

a substrate;
an insulating layer, disposed on the substrate;
a first transistor, at least comprising:
a first gate, disposed on the substrate;
a first oxide semiconductor layer, the insulating layer being disposed between the first gate and the first oxide semiconductor layer, and an area of the first gate being partially overlapped to that of the first oxide semiconductor layer;
a first source, connected to the first oxide semiconductor layer;
a first drain, connected to the first oxide semiconductor layer, and the first source and the first drain being respectively located at two sides of the first gate, wherein a portion of the first source and the first drain directly contacting the first oxide semiconductor layer is composed of a titanium (Ti)-containing metal.
a second transistor, electrically connected to the first transistor, and comprising:
a second gate, disposed on the substrate;
a second oxide semiconductor layer, the insulating layer being disposed between the second gate and the second oxide semiconductor layer, and an area of the second gate being partially overlapped to that of the second oxide semiconductor layer;
a second source, connected to the second oxide semiconductor layer;
and
a second drain, connected to the second oxide semiconductor layer, and the second source and the second drain being respectively located at two sides of the second gate, wherein a portion of the second source and the second drain directly contacting the second oxide semiconductor layer is composed of a none-Ti-containing metal.

10 more elements

An integrated circuit structure, at least comprising:

a substrate;
a first insulating layer, disposed on the substrate;
a second insulating layer, disposed on the substrate, and the first insulating layer being located between the second insulating layer and the substrate;
a first transistor, at least comprising:
a first gate, disposed between the first insulating layer and the substrate;
a first oxide semiconductor layer, the first insulating layer being disposed between the first gate and the first oxide semiconductor layer, and an area of the first gate being partially overlapped to that of the first oxide semiconductor layer;
a first source, connected to the first oxide semiconductor layer;
a first drain, connected to the first oxide semiconductor layer, and the first source and the first drain being respectively located at two sides of the first gate;
a second transistor, electrically connected to the first transistor, and comprising:
a second gate, disposed on the second insulating layer at a side departing from the substrate;
a second oxide semiconductor layer, the second insulating layer being disposed between the second gate and the second oxide semiconductor layer, and an area of the second gate being partially overlapped to that of the second oxide semiconductor layer, wherein a thickness of the first oxide semiconductor layer is different to that of the second oxide semiconductor layer;
a second source, connected to the second oxide semiconductor layer;
and
a second drain, connected to the second oxide semiconductor layer, and the second source and the second drain being respectively located at two sides of the second gate.

11 more elements

An integrated circuit structure, at least comprising:

a substrate;
a first insulating layer, disposed on the substrate;
a second insulating layer, disposed on the substrate, and the first insulating layer being located between the second insulating layer and the substrate;
a first transistor, at least comprising:
a first gate, disposed between the first insulating layer and the substrate;
a first oxide semiconductor layer, the first insulating layer being disposed between the first gate and the first oxide semiconductor layer, and an area of the first gate being partially overlapped to that of the first oxide semiconductor layer;
a first source, connected to the first oxide semiconductor layer;
a first drain, connected to the first oxide semiconductor layer, and the first source and the first drain being respectively located at two sides of the first gate;
a second transistor, electrically connected to the first transistor, and comprising:
a second gate, disposed on the second insulating layer at a side departing from the substrate;
a second oxide semiconductor layer, the second insulating layer being disposed between the second gate and the second oxide semiconductor layer, and an area of the second gate being partially overlapped to that of the second oxide semiconductor layer, wherein a carrier concentration of the first oxide semiconductor layer is different to that of the second oxide semiconductor layer;
a second source, connected to the second oxide semiconductor layer;
and
a second drain, connected to the second oxide semiconductor layer, and the second source and the second drain being respectively located at two sides of the second gate.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/494,304Filed 30 Jun 2009
Priority: TW 9714866112 Dec 2008
Published: 17 Jun 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 64/62
Electrodes characterised by their materials: electrodes ohmically coupled to a semiconductor
H10D 86/423
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…
H10D 86/427
Having a particular composition, shape or crystalline structure of the active layer: having different thicknesses of the semiconductor bodies in…
H10D 86/471
Characterised by multiple TFTs: having different architectures, e.g. having both top-gate and bottom-gate TFTs