Back to results
US 2010/0148147 A1Published application
Monolithic white and full-color light emitting diodes using selective area growth
AssigneePalo Alto Research Center Incorporated
InventorsDavid P. Bour, Christopher L. Chua, Noble M. Johnson
Life of this patent
Estimating the term…
Abstract
An embodiment is a method and apparatus for a white or full-color light-emitting diode. A first mask having a first pattern is applied over surface of an n-type layer. A first active region is grown selectively and including single or multiple quantum wells (QWs) of a first active color to cause a first wavelength shift in a first vicinity area around the first pattern. The first wavelength shift results in an emission of a first desired color according to the first pattern.
Claims25
A method comprising:
- applying a first mask having a first pattern over surface of an n-type layer;
- and
- growing selectively a first active region including single or multiple quantum wells (QWs) of a first active color to cause a first wavelength shift in a first vicinity area around the first pattern, the first wavelength shift resulting in an emission of a first desired color according to the first pattern.
An apparatus comprising:
- a first active region grown on an n-type layer;
- and
- a first vicinity area in the first active region having a first wavelength shift with respect to a first color around a first pattern defined by a first mask, the first mask causing selective area growth in the first active region resulting in thicker single or multiple quantum wells (QWs) of the first color, the thicker single or multiple QWs causing the first wavelength shift, the first wavelength shift resulting in an emission of a first desired color according to the first pattern.
A light-emitting diode (LED) comprising:
- a substrate;
- an n-type layer deposited on the substrate;
- a first active region grown on the n-type layer;
- and
- a first vicinity area in the first active region having a first wavelength shift with respect to a first color around a first pattern defined by a first mask, the first mask causing selective area growth in the first active region resulting in thicker single or multiple quantum wells (QWs) of the first color, the thicker single or multiple QWs causing the first wavelength shift, the first wavelength shift resulting in an emission of a first desired color according to the first pattern.
2 more elements
Dependencies are inferred from the claim text.