Semiconducting nanoparticles with surface modification
AssigneePST Sensors, Ltd.
InventorsDavid Thomas Britton, Margit Harting
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Abstract
The invention relates to semiconducting nanoparticles. The nanoparticles of the invention comprise a single element or a compound of elements in one or more of groups II, III, IV, V, VI. The nanoparticles have a size in the range of 1 nm to 500 nm, and comprise from 0.1 to 20 atomic percent of oxygen or hydrogen. The nanoparticles are typically formed by comminution of bulk high purity silicon. One application of the nanoparticles is in the preparation of inks which can be used to define active layers or structures of semiconductor devices by simple printing methods.
Claims37
Nanoparticles comprising a single element or a compound of elements in one or more of groups II, III, IV, V, and VI, the nanoparticles having semiconducting properties involving the transport of charge carriers, a size in the range of 1 nm to 500 nm, and comprising from 0.1 to 20 atomic percent of a substituent comprising oxygen or hydrogen.
A method of manufacturing nanoparticles, the method including the step of comminuting a feedstock material comprising a single element or a compound of elements in one or more of groups II, III, IV, V, and VI in the presence of oxygen and/or hydrogen to produce nanoparticles having n-type or p-type semiconducting properties involving the transport of charge carriers, a size in the range of 1 nm to 500 nm, and comprising from 0.1 to 20 atomic percent of a substituent comprising oxygen or hydrogen.
Dependencies are inferred from the claim text.