Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element

A method of manufacturing a nonvolatile memory element including a first electrode;

• a second electrode;
• and a resistance variable layer disposed between the first electrode and the second electrode, a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the first electrode and the second electrode;
• wherein
• the resistance variable layer includes an oxide containing tantalum and nitrogen, and the oxide is formed by a sputtering process.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• and
• a memory array including plural first electrode wires provided on the semiconductor substrate to extend in parallel with each other;
• plural second electrode wires provided above the plural first electrode wires to extend in parallel with each other within a plane parallel to a main surface of the semiconductor substrate and to three-dimensionally cross the plural first electrode wires, and nonvolatile memory elements which are provided to respectively correspond to three-dimensional cross points between the plural first electrode wires and the plural second electrode wires;
• wherein each of the nonvolatile memory elements includes a resistance variable layer disposed between the first electrode wire and the second electrode wire, a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the first electrode wire and the second electrode wire;
• and
• wherein the resistance variable layer includes an oxide containing tantalum and nitrogen.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• and
• a memory array including plural first electrode wires provided on the semiconductor substrate to extend in parallel with each other;
• plural second electrode wires provided above the plural first electrode wires to extend in parallel with each other within a plane parallel to a main surface of the semiconductor substrate and to three-dimensionally cross the plural first electrode wires, and nonvolatile memory elements which are provided to respectively correspond to three-dimensional cross points between the plural first electrode wires and the plural second electrode wires;
• wherein each of the nonvolatile memory elements includes a first electrode connected to the first electrode wire;
• a second electrode connected to the second electrode wire;
• and a resistance variable layer disposed between the first electrode and the second electrode, a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the first electrode and the second electrode;
• wherein the resistance variable layer comprises an oxide containing tantalum and nitrogen.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• plural word lines and plural bit lines which are provided on the semiconductor substrate such that the plural word lines and the plural bit lines cross each other;
• plural transistors provided to respectively correspond to cross points between the plural word lines and the plural bit lines;
• and
• plural nonvolatile memory elements provided to respectively correspond to the plural transistors such that one nonvolatile memory element corresponds to one transistor;
• wherein each of the nonvolatile memory elements includes a first electrode, a second electrode, and a resistance variable layer disposed between the first electrode and the second electrode, a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the first electrode and the second electrode via an associated transistor;
• and wherein
• wherein the resistance variable layer comprises an oxide containing tantalum and nitrogen.

A nonvolatile semiconductor apparatus comprising:

• a semiconductor substrate;
• a logic circuit provided on the semiconductor substrate, for executing predetermined calculation;
• and
• a nonvolatile memory element provided on the semiconductor substrate and having a programming function;
• wherein the nonvolatile memory element includes a first electrode, a second electrode, and a resistance variable layer disposed between the first electrode and the second electrode, a resistance value of the resistance variable layer being switchable reversibly in response to a voltage between the electrodes;
• and wherein
• the resistance variable layer comprises an oxide containing tantalum and nitrogen.