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US 2010/0148133 A1Published application
P-type metal oxide semiconductor material and fabrication method thereof
AssigneeIndustrial Technology Research Institute
InventorsKuo-Chuang CHIU, Yi-Wen KAO, Shan-Haw CHIOU
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Abstract
A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1O.
Claims10
A p-type metal oxide semiconductor material, having a formula:
- LixZnx-1O.
A fabrication method for a p-type metal oxide semiconductor material, comprising:
- providing a lithium salt and a zinc salt to be mixed in a solution, wherein the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc;
- and
- performing a heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder, having a formula:
- LixZnx-1O.
1 more element
Dependencies are inferred from the claim text.