Process for removing metallic material from casted substates, and related compositions
AssigneeGeneral Electric Company
InventorsLawrence Bernard Kool, Michael Francis Xavier Gigliotti, Shyh-Chin Huang, Gabriel Kwadwo Ofori-Okai
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Abstract
A method for removing a metallic material from the surface of a casted substrate includes the step of contacting the metallic material with an aqueous composition which comprises an acid having the formula HxAF6, or precursors to said acid. “A” in the formula is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga; and x is 1-6.
Claims30
A method for removing a metallic material from the surface of a casted substrate, comprising the step of contacting the metallic material with an aqueous composition which comprises an acid having the formula HxAF6, or precursors to said acid, wherein A is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga;
- and x is 1-6.
A method for removing a metallic substance from the surface of a casted substrate, comprising the step of immersing the casted substrate in an aqueous composition which comprises:
- (a) about 0.05 M to about 5 M of an acid having the formula HxAF6, wherein A is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga;
- and x is 1-6.
- (b) about 0.1 M to about 20 M of a phosphorous-containing compound or mixture thereof;
- and
- (c) about 0.3 M to about 1 M of hydrochloric acid or nitric acid.
An aqueous composition for removing a metallic material from the surface of a casted substrate, comprising:
- (a) about 0.05 M to about 5 M of an acid having the formula HxAF6, wherein A is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga;
- and x is 1-6;
- (b) about 0.1 M to about 1 M of a phosphorous-containing compound;
- and
- (c) about 0.3 M to about 1 M of hydrochloric acid or nitric acid.
An aqueous composition for removing a metallic material from the surface of a casted substrate, comprising:
- (a) about 0.05 M to about 5 M of an acid having the formula HxAF6, wherein A is selected from the group consisting of Si, Ge, Ti, Zr, Al, and Ga;
- and x is 1-6;
- and
- (b) about 0.3 M to about 1 M of nitric acid.
Dependencies are inferred from the claim text.