High-Frequency Plasma Processing Apparatus

A substrate processing method, comprising:

• placing a substrate in a process chamber;
• introducing an etchant gas into the process chamber through a process gas introduction line;
• applying an HF voltage to a first electrode by a first HP power source, thereby generating a plasma in the process chamber;
• applying an HF voltage to a second electrode by a second HP power source;
• the second electrode facing the first electrode in the process chamber;
• providing an inner conductor supporting the second electrode, and an outer conductor surrounding the inner conductor;
• and
• making a resonance in a coaxial resonator including the inner conductor and the outer conductor.

A substrate manufacturing method, comprising:

• placing a substrate in a process chamber;
• introducing an etchant gas into the process chamber through a process gas introduction line;
• applying an HF voltage to a first electrode by a first HP power source, thereby generating a plasma in the process chamber;
• applying an HF voltage to a second electrode by a second HP power source;
• the second electrode facing the first electrode in the process chamber;
• providing an inner conductor supporting the second electrode, and an outer conductor surrounding the inner conductor;
• and
• making a resonance in a coaxial resonator including the inner conductor and the outer conductor.