Doped interfacial modification layers for stability enhancement for bulk heterojunction organic solar cells

A device comprising:

• at least one anode,
• at least one organic photovoltaic device active layer disposed on the anode, wherein the active layer comprises at least one p-type material and at least one n-type material,
• at least one interfacial modification layer disposed on the active layer, wherein the interfacial modification layer comprises at least one dopant and at least one organic semiconductor, and
• at least one cathode disposed on the interfacial modification layer,
• wherein the dopant and the active layer are adapted to provide the device with a lifetime that is at least about 25% longer than an analogous device that does not contain the interfacial modification layer.

A device comprising:

• at least one anode;
• at least one organic photovoltaic device active layer disposed on the anode, wherein the active layer comprises at least one p-type material and one n-type material;
• at least one interfacial modification layer disposed on the active layer, wherein the interfacial modification layer comprises at least one dopant and at least one organic semiconductor;
• and
• at least one cathode disposed on the interfacial modification layer,
• wherein the dopant and the active layer are adapted to provide the device with a normalized power output greater that about 80% of initial power for at least about 25 hours.