Photovoltaic cell with shallow emitter

A method of making a photovoltaic semiconductor apparatus for use in forming a solar cell, the method comprising:

• forming a first plurality of openings in a first passivation layer on a front side of a first doped volume of semiconductor material of a semiconductor wafer having first and second adjacent oppositely doped volumes of semiconductor material forming a heterojunction, said first plurality of openings defining corresponding unpassivated areas of said first front side that are
• forming a first conductive anti-reflective coating on a first outer surface of said first passivation layer and on said corresponding unpassivated areas of said front side.

The method of clam 69 wherein forming said second passivation layer comprises forming a layer of at least one of SiO2, SiN4 and SiC on said back side surface.

A method of forming a photovoltaic semiconductor apparatus for use in forming a solar cell, the method comprising:

• forming a plurality of openings in a dielectric anti-reflective coating and a first passivation layer on a front side of a first doped volume of semiconductor material of a semiconductor wafer having first and second adjacent oppositely doped volumes of semiconductor material forming a heterojunction, to form passivated dielectric-coated areas on said front side and exposed portions of said front side of said first doped volume therebetween;
• and
• forming a first conductive anti-reflective coating on said passivated dielectric coated areas and said exposed areas of said front side surface.