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US 2010/0147218 A1Published application
Systems and methods for forming metal oxide layers
AssigneeMicron Technology, Inc.
InventorsBrian A. VAARTSTRA, Timothy A. Quick
Life of this patent
Estimating the term…
Abstract
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Claims27
1-27. (canceled)
A vapor deposition apparatus comprising:
- a vapor deposition chamber having a substrate positioned therein;
- one or more vessels comprising at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein:
- M is a metal except silicon;
- R1, R2, and R3 are each independently hydrogen or an organic group;
- x is 1 or more;
- and
- y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;
- and
- one or more sources of ozone.
6 more elements
(canceled)
An atomic layer vapor deposition apparatus comprising:
- a deposition chamber having a substrate positioned therein;
- one or more vessels comprising at least one precursor compound of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- one or more sources of ozone.
5 more elements
A vapor deposition system comprising:
- one or more vessels comprising at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein:
- M is a metal except silicon;
- R1, R2, and R3 are each independently hydrogen or an organic group;
- x is 1 or more;
- and
- y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;
- and
- one or more sources of ozone.
5 more elements
An atomic layer vapor deposition system comprising:
- one or more vessels comprising at least one precursor compound of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- one or more sources of ozone.
4 more elements
A vapor deposition system comprising:
- a vapor deposition chamber;
- one or more vessels comprising at least one precursor compound of the formula M(NR1R2)x(NR3)y, wherein:
- M is a metal except silicon;
- R1, R2, and R3 are each independently hydrogen or an organic group;
- x is 1 or more;
- and
- y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;
- and
- one or more sources of ozone.
6 more elements
Dependencies are inferred from the claim text.