Methods of Fabricating Substrates

A method of fabricating a substrate, comprising:

• forming first and second spaced features over a substrate, the first spaced features having elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features, the first and second spaced features alternating with one another;
• removing every other first feature from the substrate and forming pairs of immediately adjacent second features which alternate with individual of remaining of the first features;
• and
• after the removing, processing the substrate through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features.

A method of fabricating a substrate, comprising:

• forming first and second spaced features over a substrate, the first spaced features having elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features, the first and second spaced features alternating with one another;
• laterally etching the first and second materials selectively relative to the second features to remove every other first feature from the substrate and to reduce width of remaining of the first features and forming pairs of immediately adjacent second features which alternate with individual of the remaining of the first features;
• and
• after the laterally etching, processing the substrate through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features.

A method of fabricating a substrate, comprising:

• forming spaced first features over a substrate;
• forming anisotropically etched spacers on sidewalls of the spaced first features;
• removing the spaced first features from the substrate and forming spaced second features which comprise the spacers;
• depositing an alterable material over the spaced second features and altering the alterable material with material from the spaced second features to form altered material on sidewalls of the spaced second features;
• depositing a second material over the altered material, the second material being of some different composition from that of the altered material and from that of the spaced second features;
• removing only a portion of the second material to expose the altered material and form spaced second material;
• after forming the spaced second material, etching the altered material from between the spaced second material and forming spaced third features which comprise the spaced second material, the third features being spaced from the second features;
• and
• processing the substrate through a mask pattern comprising the spaced second features and the spaced third features.

A method of fabricating a substrate, comprising:

• forming spaced first features over a substrate;
• forming anisotropically etched spacers on sidewalls of the spaced first features;
• removing the spaced first features from the substrate and forming spaced second features which comprise the spacers;
• depositing an alterable material over the spaced second features and altering only some of the alterable material with material from the spaced second features to form altered material on sidewalls of the spaced second features and leave alterable material elevationally over and between the altered material;
• after the altering, removing only a portion of the alterable material to expose the altered material and form spaced alterable material;
• after forming the spaced alterable material, etching the altered material from between the spaced alterable material and forming spaced third features which comprise the spaced alterable material, the third features being spaced from the second features;
• and
• processing the substrate through a mask pattern comprising the spaced second features and the spaced third features.

A method of fabricating a substrate, comprising:

• forming spaced first features over a substrate;
• depositing an alterable material over the spaced first features and altering the alterable material with material from the spaced first features to form altered material on sidewalls of the spaced first features;
• after the altering, removing the spaced first features from the substrate and forming spaced second features which comprise the altered material;
• depositing a first material over the spaced second features which is of some different composition from that of the spaced second features, the first material having a non-planar outermost surface;
• depositing a second material over the first material, the second material being of some different composition from that of the first material and from that of the spaced second features;
• removing only a portion of the second material to expose the first material and form spaced second material;
• after forming the spaced second material, etching the first material from between the spaced second material and forming spaced third features which comprise spaced second material, the third features being spaced from the second features;
• and
• processing the substrate through a mask pattern comprising the spaced second features and the spaced third features.

A method of fabricating a substrate, comprising:

• forming spaced first features over a substrate;
• depositing a first alterable material over the spaced first features and altering the first alterable material with material from the spaced first features to form first altered material on sidewalls of the spaced first features;
• after the altering, removing the spaced first features from the substrate and forming spaced second features which comprise the first altered material;
• depositing a second alterable material over the spaced second features and altering the second alterable material with first altered material from the spaced second features to form second altered material on sidewalls of the spaced second features;
• depositing a third material over the second altered material, the third material being of some different composition from that of the second altered material and from that of the spaced second features;
• removing only a portion of the third material to expose the second altered material and form spaced third material;
• after forming the spaced third material, etching the second altered material from between the spaced third material and forming spaced third features which comprise spaced third material, the third features being spaced from the second features;
• and
• processing the substrate through a mask pattern comprising the spaced second features and the spaced third features.

A method of fabricating a substrate, comprising:

• forming spaced first features over a substrate;
• depositing a first alterable material over the spaced first features and altering the first alterable material with material from the spaced first features to form first altered material on sidewalls of the spaced first features;
• after the altering of the first alterable material, removing the spaced first features from the substrate and forming spaced second features which comprise the first altered material;
• depositing a second alterable material over the spaced second features and altering only some of the second alterable material with first altered material from the spaced second features to form second altered material on sidewalls of the spaced second features and leave second alterable material elevationally over and between the second altered material;
• after the altering of the second alterable material, removing only a portion of the second alterable material to expose the second altered material and form spaced second alterable material;
• after forming the spaced second alterable material, etching the second altered material from between the spaced second alterable material and forming spaced third features which comprise spaced second alterable material, the third features being spaced from the second features;
• and
• processing the substrate through a mask pattern comprising the spaced second features and the spaced third features.