Method for fabricating semiconductor device
OwnerKoji UTAKA, Yoshiharu HIDAKA +1inventors
InventorsKoji UTAKA, Yoshiharu HIDAKA, Kenji NARITA
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Abstract
The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c).
Claims20
A method for fabricating a semiconductor device, the method comprising the steps of:
- a) forming a metal film containing a noble metal on a substrate including a semiconductor layer containing silicon or a conductive film containing silicon formed on the substrate;
- b) forming, after the step a), a silicide film containing the noble metal on the substrate or the conductive film by performing thermal treatment to the substrate to cause the noble metal and silicon react with each other;
- c) activating, after the step b), unreacted part of the noble metal using a first chemical solution;
- and
- d) dissolving the unreacted part of the noble metal activated in the step c) using a second chemical solution,
- wherein
- the step d) is performed within 30 minutes after performing the step c).
A method for fabricating a semiconductor device, the method comprising the steps of:
- a) forming a first metal film containing a first noble metal on an interlevel insulation film formed on a substrate;
- b) removing, after the step a), a contaminant containing the first noble metal attached to a back surface of the substrate;
- c) forming, after the step a), a lower electrode by selectively removing the first metal film;
- d) forming a capacitive insulation film on the lower electrode;
- e) forming a second metal film containing a second noble metal on the capacitive insulation film and the substrate;
- f) removing, after the step e), a contaminant containing the second noble metal attached to the back surface of the substrate;
- and
- g) forming, after the step e), an upper electrode by selectively removing the second metal film.
A method for fabricating a semiconductor device, the method comprising the steps of:
- a) forming a first metal film containing a first noble metal, an insulation film and a second metal film containing a second noble metal in this order on an interlevel insulation film formed on a substrate:
- b) forming a lower electrode of the first metal film, a capacitive insulation film of the insulation film, and an upper electrode of the second metal film by selectively removing parts of the second metal film, the insulation film, and the first metal film together at a time;
- and
- c) removing, after the step of b), a contaminant containing the first noble metal and the second noble metal attached to a back surface of the substrate.
Dependencies are inferred from the claim text.