Back to results
US 2010/0144141 A1Published application
Semiconductor Device and Method of Forming the Same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Su Park, JaeHee Oh
Life of this patent
Estimating the term…
Abstract
Provided are a semiconductor device and a method of forming the semiconductor device. The method may include forming a semiconductor pattern on a substrate, forming an interlayer insulating layer including an opening exposing the semiconductor pattern, forming a semiconductor ohmic pattern on the semiconductor pattern, forming an electrode ohmic layer on the semiconductor ohmic pattern, performing a wet etching on the electrode ohmic layer, and forming an electrode pattern on the etched electrode ohmic layer.
Claims10
A method of forming a semiconductor device comprising:
- forming a semiconductor pattern, and an interlayer insulating layer including an opening exposing the semiconductor pattern on a substrate;
- forming a semiconductor ohmic pattern on the semiconductor pattern;
- forming an electrode ohmic layer on the semiconductor ohmic pattern;
- forming an electrode ohmic pattern in the opening by performing a wet etching on the electrode ohmic layer;
- and
- forming an electrode pattern in the opening on the electrode ohmic pattern.
3 more elements
A semiconductor device comprising:
- a substrate;
- a semiconductor pattern on the substrate;
- an interlayer insulating layer including an opening on the substrate;
- a semiconductor ohmic pattern on the semiconductor pattern in the opening;
- an electrode ohmic pattern disposed on the semiconductor ohmic pattern, the electrode ohmic pattern including a bottom portion parallel to the semiconductor ohmic pattern and a wall portion protruded from edges of the bottom portion;
- an insulating pattern in a region limited by the bottom portion and the wall portion of the electrode ohmic pattern;
- an electrode pattern on the electrode ohmic pattern in the opening;
- and
- a variable resistance pattern on the electrode pattern.
6 more elements
Dependencies are inferred from the claim text.