METHOD FOR REDUCING AGGLOMERATION OF Si LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND VACUUM TREATMENT APPARATUS

A method for manufacturing a semiconductor device by forming epitaxial layer as a semiconductor layer on a Si layer of an SOI substrate which has an insulation layer and a Si layer sequentially stacked on a Si substrate, comprising:

• a temperature-raising step of heating and temperature-raising the SOI substrate to an epitaxial growth temperature, and
• a step of epitaxially growing the semiconductor layer on the temperature-raised Si layer, wherein
• the temperature-raising step includes a step of supplying a hydride gas and a halogen-atom-containing gas prior to the epitaxial growth.

A method for forming a film on a single-crystal Si layer by growing a film-forming material on the layer from a gas of the film-forming material at a predetermined growth temperature, comprising:

• preparing a substrate having the single-crystal Si layer which is kept at a first temperature lower than the predetermined growth temperature, in the interior of a growth chamber;
• introducing the gas of the film-forming material and a halogen gas into the growth chamber, before the temperature of the single-crystal Si layer reaches the predetermined growth temperature and the film is formed, when raising the temperature of the single-crystal Si layer on the substrate to the predetermined growth temperature from the first temperature;
• and growing the film-forming material in the gas of the film-forming material on the single-crystal Si layer at the predetermined growth temperature, by reducing a content ratio of the halogen atom gas to the gas of the film-forming material in the interior of the film-forming chamber compared to the content ratio at the time before the temperature of the single-crystal Si layer reaches the predetermined growth temperature, or by making the content ratio zero, after the temperature of the single-crystal Si layer has reached the predetermined growth temperature.

-19. (canceled)