Method of forming high lateral voltage isolation structure involving two separate trench fills
AssigneeNational Semiconductor Corporation
InventorsPeter J. Hopper, William French, Kyuwoon Hwang
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Abstract
In a SOI process, a high lateral voltage isolation structure is formed by providing at least two concentric dielectric filled trenches, removing the semiconductor material between the dielectric filled trenches and filling the resultant gap with dielectric material to define a single wide dielectric filled trench.
Claims20
A method of isolating an active region in an semiconductor chip against high lateral voltages, comprising
- forming at least two initial trenches around the active region, depositing a dielectric in the trenches,
- removing any semiconductor material between the dielectric in the trenches to define at least one additional trench, and
- depositing a dielectric in said at least one additional trench.
A semiconductor chip that includes a dielectric filled trench that is not limited in width by the thickness of the CVD deposited layers.
A semiconductor chip that includes a dielectric filled trench that is more than 15 μm wide.
Dependencies are inferred from the claim text.